Search for: All records

Earth’s radiation budget and frequency and intensity of precipitation are influenced by aerosols with ice nucleation activity (INA), i.e., particles that catalyze the formation of ice. Some bacteria, fungi, and pollen are among the most efficient ice nucleators but the molecular basis of INA is poorly understood in most of them. Lysinibacillus parviboronicapiens (Lp) was previously identified as the first Gram-positive bacterium with INA. INA of Lp is associated with a secreted, nanometer-sized, non-proteinaceous macromolecule or particle. Here a combination of comparative genomics, transcriptomics, and a mutant screen showed that INA in Lp depends on a type I iterative polyketide synthase and a non-ribosomal peptide synthetase (PKS-NRPS). Differential filtration in combination with gradient ultracentrifugation revealed that the product of the PKS-NRPS is associated with secreted particles of a density typical of extracellular vesicles and electron microscopy showed that these particles consist in “pearl chain”-like structures not resembling any other known bacterial structures. These findings expand our knowledge of biological INA, may be a model for INA in other organisms for which the molecular basis of INA is unknown, and present another step towards unraveling the role of microbes in atmospheric processes.

 

Amorphous oxide semiconductors (AOSs), specifically those based on ternary cation systems such as Ga-, Si-, and Hf-doped InZnO, have emerged as promising material candidates for application in next-gen transparent electronic and optoelectronic devices. Third cation-doping is a common method used during the manufacturing of amorphous oxide thin film transistors (TFTs), primarily with the intention of suppressing carrier generation during the fabrication of the channel layer of a transistor. However, the incorporation of a third cation species has been observed to negatively affect the carrier transport properties of the thin film, as it may act as an additional scattering center and subsequently lower the carrier mobility from ∼20–40 cm 2 V −1 s −1 of In 2 O 3 or a binary cation system ( i.e. , InZnO) to ∼1–10 cm 2 V −1 s −1 . This study investigates the structural, electrical, optoelectronic, and chemical properties of the ternary cation material system, InAlZnO (IAZO). The optimized carrier mobility (Hall Effect) of Al-doped InZnO is shown to remain as high as ∼25–45 cm 2 V −1 s −1 . Furthermore, Al incorporation in InZnO proves to enhance the amorphous phase stability under thermal stresses when compared to baseline InZnO films. Thin film transistors integrating optimized IAZO as the channel layer are shown to demonstrate promisingly high field effect mobilities (∼18–20 cm 2 V −1 s −1 ), as well as excellent drain current saturation and high drain current on/off ratios (>10 7 ). The high mobility and improved amorphous phase stability suggest strong potential for IAZO incorporation in the next generation of high performance and sustainable optoelectronic devices such as transparent displays.